Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm

InGaP/GaAs/InGaAs semiconductor lasers with broad tunnel-coupled waveguides were developed and investigated experimentally. Output radiation power of 5.2 - 5.8 W was obtained from an emitting region 100 {mu}m wide with a 36{sup 0} divergence of the emitted radiation in a plane perpendicular to the p...

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Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 1999-03, Vol.29 (3), p.217-218
Hauptverfasser:	Zvonkov, N B, Akhlestina, S A, Ershov, A V, Zvonkov, B N, Maksimov, G A, Uskova, E A
Format:	Artikel
Sprache:	eng
Schlagworte:	ARSENIC COMPOUNDS ARSENIDES GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY LASERS MATERIALS SCIENCE P-N JUNCTIONS PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR LASERS SOLID STATE LASERS WAVEGUIDES WAVELENGTHS
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Beschreibung
Zusammenfassung:	InGaP/GaAs/InGaAs semiconductor lasers with broad tunnel-coupled waveguides were developed and investigated experimentally. Output radiation power of 5.2 - 5.8 W was obtained from an emitting region 100 {mu}m wide with a 36{sup 0} divergence of the emitted radiation in a plane perpendicular to the p - n junction. (lasers)
ISSN:	1063-7818 1468-4799
DOI:	10.1070/QE1999v029n03ABEH001454