Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers

An investigation was made of the influence of an excess sulfur partial pressure in the range 10/sup -3/--(2 x 10/sup 2/) Torr on the low-temperature photoluminescence spectra and also on the lasing threshold and the differential efficiency of electron-beam-excited lasers. The best laser characterist...

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Veröffentlicht in:	Sov. J. Quant. Electron. (Engl. Transl.); (United States) 1985-06, Vol.15 (6), p.867-868
Hauptverfasser:	Akimova, I V, Berezina, T I, Pechenov, A N, Reshetov, V I, Reshetova, L E, Shapkin, P V
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) CADMIUM COMPOUNDS CADMIUM SULFIDES CHALCOGENIDES CRYSTAL GROWTH EFFICIENCY ELECTRICAL PUMPING ELECTRON BEAM PUMPING ENGINEERING INORGANIC PHOSPHORS LASERS PHOSPHORS PUMPING SOLID STATE LASERS STABILITY SULFIDES SULFUR COMPOUNDS
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Zusammenfassung:	An investigation was made of the influence of an excess sulfur partial pressure in the range 10/sup -3/--(2 x 10/sup 2/) Torr on the low-temperature photoluminescence spectra and also on the lasing threshold and the differential efficiency of electron-beam-excited lasers. The best laser characteristics, including degradation stability, were obtained for sulfur pressures of 1--10 Torr.
ISSN:	0049-1748 2169-530X
DOI:	10.1070/QE1985v015n06ABEH007178