External-cavity diode laser emitting in the middle infrared range

Experiments are reported in which lasing in the 10 micron range was achieved with an external-cavity diode laser based on a Pb(1-x)Sn(x)Se solid solution. AT 4.2 K, the emission wavelength was 9.90 microns, the threshold current in the pulsed and CW regimes was 0.45 and 0.46 A, respectively, and the...

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Bibliographische Detailangaben

Veröffentlicht in:	Sov. J. Quant. Electron. (Engl. Transl.); (United States) 1983-02, Vol.13 (2), p.256-257
Hauptverfasser:	Zasavitskiĭ, I I, Kosichkin, Yu V, Kryukov, P V, Nadezhdinskiĭ, A I, Perov, A N, Raab, S, Stepanov, E V, Shotov, A P
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) ABSORPTION ELECTROMAGNETIC RADIATION EMISSION ENERGY-LEVEL TRANSITIONS ENGINEERING INFRARED RADIATION LASER CAVITIES LASERS RADIATIONS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SPECTRA STIMULATED EMISSION
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