External-cavity diode laser emitting in the middle infrared range

External-cavity diode laser emitting in the middle infrared range

Experiments are reported in which lasing in the 10 micron range was achieved with an external-cavity diode laser based on a Pb(1-x)Sn(x)Se solid solution. AT 4.2 K, the emission wavelength was 9.90 microns, the threshold current in the pulsed and CW regimes was 0.45 and 0.46 A, respectively, and the...

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Veröffentlicht in:Sov. J. Quant. Electron. (Engl. Transl.); (United States) 1983-02, Vol.13 (2), p.256-257
Hauptverfasser: Zasavitskiĭ, I I, Kosichkin, Yu V, Kryukov, P V, Nadezhdinskiĭ, A I, Perov, A N, Raab, S, Stepanov, E V, Shotov, A P
Format: Artikel
Sprache:eng
Schlagworte:
420300 - Engineering- Lasers- (-1989)
ABSORPTION
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
ENGINEERING
INFRARED RADIATION
LASER CAVITIES
LASERS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
STIMULATED EMISSION
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Beschreibung
Zusammenfassung:Experiments are reported in which lasing in the 10 micron range was achieved with an external-cavity diode laser based on a Pb(1-x)Sn(x)Se solid solution. AT 4.2 K, the emission wavelength was 9.90 microns, the threshold current in the pulsed and CW regimes was 0.45 and 0.46 A, respectively, and the contact resistance was below 0.01 ohm. High-resolution spectra in the same wavelength range were also achieved in the intracavity absorption configuration.
ISSN:0049-1748
2169-530X
DOI:10.1070/QE1983v013n02ABEH004136