Injection heterolaser based on InGaAsSb four-component solid solution

Injection heterolaser based on InGaAsSb four-component solid solution

Stimulated emission was obtained at the wavelength of 1.9 ..mu.. from a GaSb/InGaAsSb/GaSb heterostructure using an injection current of 900 A/cm/sup 2/ density at 90/sup 0/ K.

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Bibliographische Detailangaben
Veröffentlicht in:Sov. J. Quant. Electron. (Engl. Transl.); (United States) 1978-03, Vol.8 (3), p.416-416
Hauptverfasser: Dolginov, L M, Druzhinina, L V, Eliseev, P G, Lapshin, A N, Mil'vidskiĭ, M G, Sverdlov, B N
Format: Artikel
Sprache:eng
Schlagworte:
ALLOYS
ANTIMONY ALLOYS
ARSENIC ALLOYS
DISPERSIONS
EFFICIENCY
ELECTRICAL PUMPING
EMISSION
ENERGY-LEVEL TRANSITIONS
ENGINEERING
FABRICATION
GALLIUM ALLOYS
INDIUM ALLOYS
LASERS
LOW TEMPERATURE
MIXTURES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID SOLUTIONS
SOLUTIONS 420300 > Engineering-- Lasers-- (-1989)
STIMULATED EMISSION
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Beschreibung
Zusammenfassung:Stimulated emission was obtained at the wavelength of 1.9 ..mu.. from a GaSb/InGaAsSb/GaSb heterostructure using an injection current of 900 A/cm/sup 2/ density at 90/sup 0/ K.
ISSN:0049-1748
2169-530X
DOI:10.1070/QE1978v008n03ABEH010046