KINETICS OF RECOVERY OF LUMINESCENCE PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS IRRADIATED WITH HIGH-ENERGY ELECTRONS

KINETICS OF RECOVERY OF LUMINESCENCE PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS IRRADIATED WITH HIGH-ENERGY ELECTRONS

An investigation was made of the kinetics of changes in the luminescence and laser properties of GaAs as a result of irradiation with 600-keV electrons (pulsed electron current density, 30 A/cm/sup 2/) and subsequent annealing at 300 deg K. An increase in the intensity of the photoluminesence emittt...

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Veröffentlicht in:Sov. J. Quantum Electron., v. 2, no. 5, pp. 479-481 v. 2, no. 5, pp. 479-481, 1973-05, Vol.2 (5), p.479-481
Hauptverfasser: Bogdankevich, O V, Borisov, N A, Kalendin, V V, Kovsh, Ivan B, Kryukova, I V
Format: Artikel
Sprache:eng
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ELECTRON BEAMS
GALLIUM ARSENIDES- PHYSICAL RADIATION EFFECTS
KEV RANGE 100-1000
LUMINESCENCE
MONOCRYSTALS
N50340 -Metals, Ceramics, & Other Materials-Plastics & Other Materials-Radiation Effects
SEMICONDUCTOR LASERS- PHYSICAL RADIATION EFFECTS
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container_end_page 481
container_issue 5
container_start_page 479
container_title Sov. J. Quantum Electron., v. 2, no. 5, pp. 479-481
container_volume 2
creator Bogdankevich, O V
Borisov, N A
Kalendin, V V
Kovsh, Ivan B
Kryukova, I V
description An investigation was made of the kinetics of changes in the luminescence and laser properties of GaAs as a result of irradiation with 600-keV electrons (pulsed electron current density, 30 A/cm/sup 2/) and subsequent annealing at 300 deg K. An increase in the intensity of the photoluminesence emittted by n-type GaAs:Te crystals and a reduction in the laser threshold value of the pumping current were observed. These changes depended on the density of the electron current, the total absorbed dose, and the parameters of the original crystals. No improvement was observed for undoped epitaxial samples. A qualitative explanation of the effects observed was put forward. (auth)
doi_str_mv 10.1070/QE1973v002n05ABEH004498
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subjects ELECTRON BEAMS
GALLIUM ARSENIDES- PHYSICAL RADIATION EFFECTS
KEV RANGE 100-1000
LUMINESCENCE
MONOCRYSTALS
N50340 -Metals, Ceramics, & Other Materials-Plastics & Other Materials-Radiation Effects
SEMICONDUCTOR LASERS- PHYSICAL RADIATION EFFECTS
title KINETICS OF RECOVERY OF LUMINESCENCE PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS IRRADIATED WITH HIGH-ENERGY ELECTRONS
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