KINETICS OF RECOVERY OF LUMINESCENCE PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS IRRADIATED WITH HIGH-ENERGY ELECTRONS

An investigation was made of the kinetics of changes in the luminescence and laser properties of GaAs as a result of irradiation with 600-keV electrons (pulsed electron current density, 30 A/cm/sup 2/) and subsequent annealing at 300 deg K. An increase in the intensity of the photoluminesence emittt...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Sov. J. Quantum Electron., v. 2, no. 5, pp. 479-481 v. 2, no. 5, pp. 479-481, 1973-05, Vol.2 (5), p.479-481
Hauptverfasser:	Bogdankevich, O V, Borisov, N A, Kalendin, V V, Kovsh, Ivan B, Kryukova, I V
Format:	Artikel
Sprache:	eng
Schlagworte:	ELECTRON BEAMS GALLIUM ARSENIDES- PHYSICAL RADIATION EFFECTS KEV RANGE 100-1000 LUMINESCENCE MONOCRYSTALS N50340 -Metals, Ceramics, & Other Materials-Plastics & Other Materials-Radiation Effects SEMICONDUCTOR LASERS- PHYSICAL RADIATION EFFECTS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	An investigation was made of the kinetics of changes in the luminescence and laser properties of GaAs as a result of irradiation with 600-keV electrons (pulsed electron current density, 30 A/cm/sup 2/) and subsequent annealing at 300 deg K. An increase in the intensity of the photoluminesence emittted by n-type GaAs:Te crystals and a reduction in the laser threshold value of the pumping current were observed. These changes depended on the density of the electron current, the total absorbed dose, and the parameters of the original crystals. No improvement was observed for undoped epitaxial samples. A qualitative explanation of the effects observed was put forward. (auth)
ISSN:	0049-1748 2169-530X
DOI:	10.1070/QE1973v002n05ABEH004498