Impact of nanoscale patterning on Schottky contact resistance in AlGaN/GaN Schottky barrier diode
The improvement of the Schottky contact resistance in an AlGaN/GaN Schottky barrier diode was investigated using dense nanoscale mesa holes. The 100 nm mesa hole array under the Schottky metal added a Schottky contact to the mesa edge with a length of 9.4 µm/µm2. This decreased the contact resistanc...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2018-11, Vol.57 (11), p.111002 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The improvement of the Schottky contact resistance in an AlGaN/GaN Schottky barrier diode was investigated using dense nanoscale mesa holes. The 100 nm mesa hole array under the Schottky metal added a Schottky contact to the mesa edge with a length of 9.4 µm/µm2. This decreased the contact resistance from 8.23 to 2.55 Ω·mm for a 15 × 100 µm2 AlGaN/GaN Schottky contact. Also, the transfer length of 12.5 µm was reduced to 3.6 µm by using the mesa array. The nanoscale mesa holes increased the Schottky current and enabled a narrow Schottky contact with high current density. The diode with a 2 × 100 µm2 Schottky contact that has mesa holes showed a current of 131 A/mm2 at 3 V, which is 3.1 times higher than that of a conventional structure. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.57.111002 |