Wet chemical preparation and isotope exchange process of H/D-terminated Si(111) and Si(110) studied by adsorbate vibrational analysis
A convenient procedure for preparing D-terminated Si(111)-(1×1) and Si(110)-(1×1) by wet chemical etching was developed and applied to the vibrational analysis of these surfaces by high-resolution electron-energy loss spectroscopy (HREELS). Fully H-terminated Si(111)/(110) was first prepared in regu...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2017-02, Vol.56 (2), p.25701-025701 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A convenient procedure for preparing D-terminated Si(111)-(1×1) and Si(110)-(1×1) by wet chemical etching was developed and applied to the vibrational analysis of these surfaces by high-resolution electron-energy loss spectroscopy (HREELS). Fully H-terminated Si(111)/(110) was first prepared in regular 40% NH4F/H2O solution, followed by immersion in saturated KF/D2O solution. HREELS revealed partially D-terminated H:Si(111)/(110) with the amount of deuterium termination depending on the immersion time. A series of various immersion times revealed the H/D exchange reaction kinetics, which are associated with the Si substrate etching processes on Si(111) (step-flow etching) and Si(110) (zipper reaction). The H-Si and D-Si stretching vibration frequencies as functions of the surface D fraction did not appear to change on Si(111), but on Si(110) the H-Si signal red shifted at a high D fraction. This is due to the adsorbate-adsorbate interaction, which is more intense on Si(110) because of the short nearest-neighbor distance of the adsorbates. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.56.025701 |