GaNSb alloys grown with H2 and N2 carrier gases

We grew GaNSb layers with H2 and N2 carrier gases by metalorganic vapor phase epitaxy. We estimated the GaSb molar fraction in a GaNSb layer grown with H2 by Rutherford backscattering spectroscopy. A 0.8% GaSb molar fraction was obtained, which was consistent with the value obtained by secondary ion mass spectroscopy. We correlated the obtained GaSb molar fraction with the c-axis lattice constant of GaSb estimated from an X-ray diffraction pattern. We investigated GaSb molar fractions in GaNSb grown with H2 and N2 at various growth temperatures. While GaSb molar fractions in the H2 case showed a plateau at 0.8% at less than 800 °C, those in the N2 case increased to 1.1% with a decrease in the growth temperature to 750 °C. Sb incorporation into GaNSb could be further improved by carrying out growth under N2, similar to the case of GaInN growth.