Shot noise effect on noise source and noise parameter of 10-nm-scale quasi-ballistic n-/p-type MOS devices

In this work, we investigated the noise source and noise parameters of a quasi-ballistic MOSFET at the high-frequency regime. We presented the shot noise properties in the measured drain current noise and its impact on the induced gate noise and the noise parameters of 10-nm-scale n-/p-type MOS (N/PMOS) devices for the first time. The measured noise sources and noise parameters were carefully analyzed with the shot and thermal noise models in all operation regions. On the basis of the results, new noise parameter models are proposed and the noise performance improvement in the quasi-ballistic regime is shown.