Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2...

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Veröffentlicht in:Japanese Journal of Applied Physics 2016-04, Vol.55 (4S), p.4
Hauptverfasser: Cheong, Heajeong, Kuribara, Kazunori, Ogura, Shintaro, Fukuda, Nobuko, Yoshida, Manabu, Ushijima, Hirobumi, Uemura, Sei
Format: Artikel
Sprache:eng
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Zusammenfassung:We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field-effect mobility of 0.9 cm2·V−1·s−1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04EL04