Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate

Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate

The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13 A/cm2. We obtained no-phonon- and phonon-assisted replicas in emission spectra. Also, the...

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Veröffentlicht in:Japanese Journal of Applied Physics 2016-04, Vol.55 (4S), p.4
Hauptverfasser: Chang, Chiao, Li, Hui, Huang, Ssu-Hsuan, Lin, Li-Chien, Cheng, Hung-Hsiang
Format: Artikel
Sprache:eng
Schlagworte:
Diodes
Electroluminescence
Energy gaps (solid state)
Germanium
Heterojunctions
Injection current
Light-emitting diodes
Silicon substrates
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Zusammenfassung:The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13 A/cm2. We obtained no-phonon- and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni s empirical expression with α = 4.884 × 10−4 eV/K and β = 130 K.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.55.04EH03