Room temperature ferromagnetism in magnetron sputtering prepared Mn-doped ZnO thin films

Room temperature ferromagnetism has been observed in Mn-doped ZnO thin films using radio frequency magnetron sputtering. X-ray diffraction measurements show that the samples possess wurtize structures without secondary phases. Magnetization loops for Mn-doped ZnO thin film which deposited at 300 °C...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2015-06, Vol.54 (6S1), p.6
Hauptverfasser: Zhang, Yu, Okamoto, Junpei, Nasu, Naho, Zhao, Xinwei
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Room temperature ferromagnetism has been observed in Mn-doped ZnO thin films using radio frequency magnetron sputtering. X-ray diffraction measurements show that the samples possess wurtize structures without secondary phases. Magnetization loops for Mn-doped ZnO thin film which deposited at 300 °C and annealed in O2 atmosphere at 500 °C were measured at 300 K and show ferromagnetic behaviour. In our study, the result shows that it is the substitutional Mn2+ ions that make the ferromagnetic ordering in Mn doped ZnO thin films. Ferromagentic ordering becomes weaker at higher concentration of oxygen vacancy.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.06FJ08