Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field
We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2015-02, Vol.54 (2) |
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container_title | Japanese Journal of Applied Physics |
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creator | Gushi, Toshiki Ito, Keita Honda, Syuta Yasutomi, Yoko Toko, Kaoru Oosato, Hirotaka Sugimoto, Yoshimasa Asakawa, Kiyoshi Ota, Norio Suemasu, Takashi |
description | We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization. |
doi_str_mv | 10.7567/JJAP.54.028003 |
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Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.54.028003</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2015-02, Vol.54 (2)</ispartof><rights>2015 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.54.028003/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Gushi, Toshiki</creatorcontrib><creatorcontrib>Ito, Keita</creatorcontrib><creatorcontrib>Honda, Syuta</creatorcontrib><creatorcontrib>Yasutomi, Yoko</creatorcontrib><creatorcontrib>Toko, Kaoru</creatorcontrib><creatorcontrib>Oosato, Hirotaka</creatorcontrib><creatorcontrib>Sugimoto, Yoshimasa</creatorcontrib><creatorcontrib>Asakawa, Kiyoshi</creatorcontrib><creatorcontrib>Ota, Norio</creatorcontrib><creatorcontrib>Suemasu, Takashi</creatorcontrib><title>Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. 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J. Appl. Phys</addtitle><date>2015-02-01</date><risdate>2015</risdate><volume>54</volume><issue>2</issue><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.54.028003</doi><tpages>3</tpages></addata></record> |
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title | Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field |
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