Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field

We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are...

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Veröffentlicht in:Japanese Journal of Applied Physics 2015-02, Vol.54 (2)
Hauptverfasser: Gushi, Toshiki, Ito, Keita, Honda, Syuta, Yasutomi, Yoko, Toko, Kaoru, Oosato, Hirotaka, Sugimoto, Yoshimasa, Asakawa, Kiyoshi, Ota, Norio, Suemasu, Takashi
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Sprache:eng
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Zusammenfassung:We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.028003