Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant

In recent years, deep-level transient spectroscopy (DLTS) has been used to evaluate the electrical characteristics of quantum dots (QDs) for evaluating not only defects around QDs, but also the capture and emission properties of carriers in QDs. In this report, the electrical characteristics of 10-layer QDs grown using a Bi surfactant were evaluated mainly by DLTS. The DLTS spectra show unique dependences on the bias voltage, and it is shown that the characteristics can be explained by considering the tunneling of carriers captured in QDs. From our discussion, all of the DLTS peaks except the EL2-like signal are due to carrier emission from the electron and hole levels in QDs.