Tunable photoluminescent properties of Eu-doped β-Ga2O3 phosphor thin films prepared via excimer laser-assisted metal organic decomposition

A Ga2O3:Eu thin film was prepared via excimer laser-assisted metal organic decomposition (ELAMOD) using an ArF laser at RT, and the effects of temperature and laser fluence during irradiation on the photoluminescent (PL) properties were investigated. Direct irradiation of the precursor film comprising metal organic compounds was found to be effective for obtaining excellent PL properties. Moreover, as the laser fluence of the ArF laser used changed, the PL intensity ratio of the peaks at 511 and 614 nm accordingly changed. The color coordinates of the β-Ga2O3:Eu3+ thin films prepared by ELAMOD were x = 0.43 and y = 0.38. On the other hand, β-Ga2O3 films prepared via ELAMOD at fluences of 100 and 150 mJ/cm2 exhibited a strong broad blue-green emission band with a peak wavelength of approximately 421 nm. The emission mechanism of the Ga2O3:Eu films prepared via ELAMOD was also investigated.