1200 V Schottky controlled injection diode: An advanced anode concept for low injection efficiency

This paper proposes a novel 1200 V p-i-n diode concept for realizing low forward voltage drop, low reverse recovery loss, and low leakage current at high temperatures above 175 °C. These characteristics are achieved by adopting a combination of flat and linear distributions of carrier concentration from the anode side to the cathode side and reduced injection efficiencies at both sides under forward bias conditions with high carrier lifetime. Furthermore, we have obtained high reverse recovery ruggedness by combining a new edge termination design with a Schottky contact on the cathode side and a deep P anode layer design on the anode side.