An analytical approach for the determination of the lateral trap position in ultra-scaled MOSFETs

We propose a new method to determine the lateral trap position in ultra-scaled MOSFETs with a precision of less than 1 nm. The method is based on an analytical model which links the surface potential in the presence of a discrete trap to the drain voltage. We demonstrate that the dependence between the surface potential in the damaged region of the channel and the drain voltage is quasi-linear. The unique slope of this dependence corresponds to a particular lateral trap position and can thus be used as a fingerprint to locate the trap. A high accuracy is reached due to a negligibly small impact of the random dopant fluctuations on the slope magnitude. To verify our analytical approach we employ standard technology computer aided design (TCAD) methods, including random discrete dopants for both n- and p-MOSFETs with various channel lengths.