Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer

We grew AlInP on two types of GaN substrate in order to transfer the wurtzite (WZ) structure to grown layers. An AlInP epitaxial layer grown on GaN with high-density stacking faults was obtained. X-ray diffraction and Raman scattering analyses indicate that the dominant crystal structure of the AlInP layer grown on GaN was WZ. Cathode luminescence measurements at 35 K revealed strong green emissions from the WZ AlInP layer, suggesting an energy band gap change from indirect to direct. These results demonstrate the potential of WZ AlInP as a new candidate for high-efficiency green emission material.