Resonant magnetization switching induced by spin-torque-driven oscillations and its use in three-dimensional magnetic storage applications

Control of magnetization switching is crucial for magnetic storage devices. We numerically show that magnetization switching of a magnetic dot can be induced by using only a spin-torque oscillator (STO). The magnetic-dot magnetization exhibits cooperative dynamics with the STO through dipolar coupling and reverses into a final switched state. This resonant switching occurs under a certain precession chirality and STO frequency range that depend on the magnetic dot s initial direction and intrinsic resonance frequency. We also show that the resonant-switching characteristics are suitable for three-dimensional magnetic storage applications and propose a multi-bit memory cell based on the switching principle.