Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance

Magnetization switching assisted by high-frequency voltage was demonstrated in magnetic tunnel junctions with perpendicular magnetization. Ferromagnetic resonance was excited by high-frequency voltage instead of by a high-frequency magnetic field. A frequency-dependent reduction in the switching fie...

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Veröffentlicht in:Applied physics express 2014-07, Vol.7 (7), p.73002
Hauptverfasser: Nozaki, Takayuki, Arai, Hiroko, Yakushiji, Kay, Tamaru, Shingo, Kubota, Hitoshi, Imamura, Hiroshi, Fukushima, Akio, Yuasa, Shinji
Format: Artikel
Sprache:eng
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Zusammenfassung:Magnetization switching assisted by high-frequency voltage was demonstrated in magnetic tunnel junctions with perpendicular magnetization. Ferromagnetic resonance was excited by high-frequency voltage instead of by a high-frequency magnetic field. A frequency-dependent reduction in the switching field (coercive force) was clearly observed with a maximum reduction rate of more than 80% under a radio-frequency power application of 3 dBm. The developed technique can provide a novel approach to energy-assisted magnetization switching with low ohmic dissipation.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.073002