Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance
Magnetization switching assisted by high-frequency voltage was demonstrated in magnetic tunnel junctions with perpendicular magnetization. Ferromagnetic resonance was excited by high-frequency voltage instead of by a high-frequency magnetic field. A frequency-dependent reduction in the switching fie...
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Veröffentlicht in: | Applied physics express 2014-07, Vol.7 (7), p.73002 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Magnetization switching assisted by high-frequency voltage was demonstrated in magnetic tunnel junctions with perpendicular magnetization. Ferromagnetic resonance was excited by high-frequency voltage instead of by a high-frequency magnetic field. A frequency-dependent reduction in the switching field (coercive force) was clearly observed with a maximum reduction rate of more than 80% under a radio-frequency power application of 3 dBm. The developed technique can provide a novel approach to energy-assisted magnetization switching with low ohmic dissipation. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/APEX.7.073002 |