Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration
We report on the photovoltaic characteristics of solar cells based on 15 and 30 InxGa1−xN/GaN (x = 0.10 and 0.19) multiquantum wells (MQWs) grown on sapphire. Doubling the number of MQWs increases the peak external quantum efficiency by a factor of 2 for both In contents. Devices with 19% In, with a...
Gespeichert in:
Veröffentlicht in: | Applied physics express 2014-02, Vol.7 (3), p.32301 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We report on the photovoltaic characteristics of solar cells based on 15 and 30 InxGa1−xN/GaN (x = 0.10 and 0.19) multiquantum wells (MQWs) grown on sapphire. Doubling the number of MQWs increases the peak external quantum efficiency by a factor of 2 for both In contents. Devices with 19% In, with a spectral cutoff at 465 nm, exhibit an open-circuit voltage of 1.7 V and a short-circuit current density of 3.00 mA/cm2 under 1 sun AM1.5G illumination, leading to a conversion efficiency of 2.00%, making them promising for hybrid integration with non-III-nitride photovoltaic devices. |
---|---|
ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/APEX.7.032301 |