Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration

We report on the photovoltaic characteristics of solar cells based on 15 and 30 InxGa1−xN/GaN (x = 0.10 and 0.19) multiquantum wells (MQWs) grown on sapphire. Doubling the number of MQWs increases the peak external quantum efficiency by a factor of 2 for both In contents. Devices with 19% In, with a...

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Veröffentlicht in:Applied physics express 2014-02, Vol.7 (3), p.32301
Hauptverfasser: Valdueza-Felip, Sirona, Mukhtarova, Anna, Grenet, Louis, Bougerol, Catherine, Durand, Christophe, Eymery, Joel, Monroy, Eva
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Sprache:eng
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Zusammenfassung:We report on the photovoltaic characteristics of solar cells based on 15 and 30 InxGa1−xN/GaN (x = 0.10 and 0.19) multiquantum wells (MQWs) grown on sapphire. Doubling the number of MQWs increases the peak external quantum efficiency by a factor of 2 for both In contents. Devices with 19% In, with a spectral cutoff at 465 nm, exhibit an open-circuit voltage of 1.7 V and a short-circuit current density of 3.00 mA/cm2 under 1 sun AM1.5G illumination, leading to a conversion efficiency of 2.00%, making them promising for hybrid integration with non-III-nitride photovoltaic devices.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.032301