Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited...

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Veröffentlicht in:	Applied physics express 2018-11, Vol.11 (11), p.112701
Hauptverfasser:	Slight, Thomas J., Stanczyk, Szymon, Watson, Scott, Yadav, Amit, Grzanka, Szymon, Rafailov, Edik, Perlin, Piotr, Najda, Stephen P., Leszczy ski, Mike, Gwyn, Steffan, Kelly, Anthony E.
Format:	Artikel
Sprache:	eng
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Zusammenfassung:	We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.
ISSN:	1882-0778 1882-0786
DOI:	10.7567/APEX.11.112701