Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector

Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector

AlGaN-based UV-C vertical LEDs comprising Ga-face n-contact and an internal reflector are reported here. Inside the chip, the internal reflector is designed as a hexagonal shape surrounding a circular n-electrode. The use of SiO2/Al reflectors on the etched plane improves the local reflectivity. For...

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Veröffentlicht in:Applied physics express 2019-12, Vol.12 (12), p.122011
Hauptverfasser: Sung, Youn Joon, Lee, Young-Gyeong, Kim, Hwankyo, Lim, Hyun-Soo, Kwon, O-Min, Choi, Sunghan, Moon, Yong-Tae, Choi, Rak-Jun, Jung, Myung-Hoon, Oh, Jeong-Tak, Kim, Dong Woo, Yeom, Geun Young
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container_issue 12
container_start_page 122011
container_title Applied physics express
container_volume 12
creator Sung, Youn Joon
Lee, Young-Gyeong
Kim, Hwankyo
Lim, Hyun-Soo
Kwon, O-Min
Choi, Sunghan
Moon, Yong-Tae
Choi, Rak-Jun
Jung, Myung-Hoon
Oh, Jeong-Tak
Kim, Dong Woo
Yeom, Geun Young
description AlGaN-based UV-C vertical LEDs comprising Ga-face n-contact and an internal reflector are reported here. Inside the chip, the internal reflector is designed as a hexagonal shape surrounding a circular n-electrode. The use of SiO2/Al reflectors on the etched plane improves the local reflectivity. Forming the internal reflector has been shown to lead to a significant improvement in light output power (LOP). The LOP of the vertical LED with an internal reflector is 1.27 times higher than that of the vertical LED without an internal reflector.
doi_str_mv 10.7567/1882-0786/ab52b6
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_7567_1882_0786_ab52b6</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apexab52b6</sourcerecordid><originalsourceid>FETCH-LOGICAL-c314t-84c9abe80a97dad13497db78eb421a40f6504a1838327b44c06ac40b23f422ec3</originalsourceid><addsrcrecordid>eNp9kM1Lw0AQxRdRsFbvHvcquHa_mmyPpdQqFL3oedlsJs2WNAm729oe_N9NiPQkwsAbhvebGR5C94w-pdMknTClOKGpSiYmm_IsuUCj8-jy3KfqGt2EsKU0kYIlI_S9rEtTW1dvcCwBV25TRgzH6I2NrqlxU-B5tTJvJDMBcnwAH501FY6nFnAO0JJ91ZkPrqkgDjiBnYux20hy1-QQ8JeLJTY1dnUEX3ewh6ICGxt_i64KUwW4-9Ux-nxefixeyPp99bqYr4kVTEaipJ2ZDBQ1szQ3OROy0yxVkEnOjKRFMqXSMCWU4GkmpaWJsZJmXBSSc7BijOiw1_omhO68br3bGX_SjOo-Pt3no_us9BBfhzwOiGtavW32_ePhP_vDH3bTwlEzPhSnjOk2L8QPBfSBlg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Sung, Youn Joon ; Lee, Young-Gyeong ; Kim, Hwankyo ; Lim, Hyun-Soo ; Kwon, O-Min ; Choi, Sunghan ; Moon, Yong-Tae ; Choi, Rak-Jun ; Jung, Myung-Hoon ; Oh, Jeong-Tak ; Kim, Dong Woo ; Yeom, Geun Young</creator><creatorcontrib>Sung, Youn Joon ; Lee, Young-Gyeong ; Kim, Hwankyo ; Lim, Hyun-Soo ; Kwon, O-Min ; Choi, Sunghan ; Moon, Yong-Tae ; Choi, Rak-Jun ; Jung, Myung-Hoon ; Oh, Jeong-Tak ; Kim, Dong Woo ; Yeom, Geun Young</creatorcontrib><description>AlGaN-based UV-C vertical LEDs comprising Ga-face n-contact and an internal reflector are reported here. Inside the chip, the internal reflector is designed as a hexagonal shape surrounding a circular n-electrode. The use of SiO2/Al reflectors on the etched plane improves the local reflectivity. Forming the internal reflector has been shown to lead to a significant improvement in light output power (LOP). The LOP of the vertical LED with an internal reflector is 1.27 times higher than that of the vertical LED without an internal reflector.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/1882-0786/ab52b6</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><ispartof>Applied physics express, 2019-12, Vol.12 (12), p.122011</ispartof><rights>2019 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c314t-84c9abe80a97dad13497db78eb421a40f6504a1838327b44c06ac40b23f422ec3</citedby><cites>FETCH-LOGICAL-c314t-84c9abe80a97dad13497db78eb421a40f6504a1838327b44c06ac40b23f422ec3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1882-0786/ab52b6/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Sung, Youn Joon</creatorcontrib><creatorcontrib>Lee, Young-Gyeong</creatorcontrib><creatorcontrib>Kim, Hwankyo</creatorcontrib><creatorcontrib>Lim, Hyun-Soo</creatorcontrib><creatorcontrib>Kwon, O-Min</creatorcontrib><creatorcontrib>Choi, Sunghan</creatorcontrib><creatorcontrib>Moon, Yong-Tae</creatorcontrib><creatorcontrib>Choi, Rak-Jun</creatorcontrib><creatorcontrib>Jung, Myung-Hoon</creatorcontrib><creatorcontrib>Oh, Jeong-Tak</creatorcontrib><creatorcontrib>Kim, Dong Woo</creatorcontrib><creatorcontrib>Yeom, Geun Young</creatorcontrib><title>Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>AlGaN-based UV-C vertical LEDs comprising Ga-face n-contact and an internal reflector are reported here. Inside the chip, the internal reflector is designed as a hexagonal shape surrounding a circular n-electrode. The use of SiO2/Al reflectors on the etched plane improves the local reflectivity. Forming the internal reflector has been shown to lead to a significant improvement in light output power (LOP). The LOP of the vertical LED with an internal reflector is 1.27 times higher than that of the vertical LED without an internal reflector.</description><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kM1Lw0AQxRdRsFbvHvcquHa_mmyPpdQqFL3oedlsJs2WNAm729oe_N9NiPQkwsAbhvebGR5C94w-pdMknTClOKGpSiYmm_IsuUCj8-jy3KfqGt2EsKU0kYIlI_S9rEtTW1dvcCwBV25TRgzH6I2NrqlxU-B5tTJvJDMBcnwAH501FY6nFnAO0JJ91ZkPrqkgDjiBnYux20hy1-QQ8JeLJTY1dnUEX3ewh6ICGxt_i64KUwW4-9Ux-nxefixeyPp99bqYr4kVTEaipJ2ZDBQ1szQ3OROy0yxVkEnOjKRFMqXSMCWU4GkmpaWJsZJmXBSSc7BijOiw1_omhO68br3bGX_SjOo-Pt3no_us9BBfhzwOiGtavW32_ePhP_vDH3bTwlEzPhSnjOk2L8QPBfSBlg</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Sung, Youn Joon</creator><creator>Lee, Young-Gyeong</creator><creator>Kim, Hwankyo</creator><creator>Lim, Hyun-Soo</creator><creator>Kwon, O-Min</creator><creator>Choi, Sunghan</creator><creator>Moon, Yong-Tae</creator><creator>Choi, Rak-Jun</creator><creator>Jung, Myung-Hoon</creator><creator>Oh, Jeong-Tak</creator><creator>Kim, Dong Woo</creator><creator>Yeom, Geun Young</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20191201</creationdate><title>Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector</title><author>Sung, Youn Joon ; Lee, Young-Gyeong ; Kim, Hwankyo ; Lim, Hyun-Soo ; Kwon, O-Min ; Choi, Sunghan ; Moon, Yong-Tae ; Choi, Rak-Jun ; Jung, Myung-Hoon ; Oh, Jeong-Tak ; Kim, Dong Woo ; Yeom, Geun Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c314t-84c9abe80a97dad13497db78eb421a40f6504a1838327b44c06ac40b23f422ec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sung, Youn Joon</creatorcontrib><creatorcontrib>Lee, Young-Gyeong</creatorcontrib><creatorcontrib>Kim, Hwankyo</creatorcontrib><creatorcontrib>Lim, Hyun-Soo</creatorcontrib><creatorcontrib>Kwon, O-Min</creatorcontrib><creatorcontrib>Choi, Sunghan</creatorcontrib><creatorcontrib>Moon, Yong-Tae</creatorcontrib><creatorcontrib>Choi, Rak-Jun</creatorcontrib><creatorcontrib>Jung, Myung-Hoon</creatorcontrib><creatorcontrib>Oh, Jeong-Tak</creatorcontrib><creatorcontrib>Kim, Dong Woo</creatorcontrib><creatorcontrib>Yeom, Geun Young</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sung, Youn Joon</au><au>Lee, Young-Gyeong</au><au>Kim, Hwankyo</au><au>Lim, Hyun-Soo</au><au>Kwon, O-Min</au><au>Choi, Sunghan</au><au>Moon, Yong-Tae</au><au>Choi, Rak-Jun</au><au>Jung, Myung-Hoon</au><au>Oh, Jeong-Tak</au><au>Kim, Dong Woo</au><au>Yeom, Geun Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2019-12-01</date><risdate>2019</risdate><volume>12</volume><issue>12</issue><spage>122011</spage><pages>122011-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>AlGaN-based UV-C vertical LEDs comprising Ga-face n-contact and an internal reflector are reported here. Inside the chip, the internal reflector is designed as a hexagonal shape surrounding a circular n-electrode. The use of SiO2/Al reflectors on the etched plane improves the local reflectivity. Forming the internal reflector has been shown to lead to a significant improvement in light output power (LOP). The LOP of the vertical LED with an internal reflector is 1.27 times higher than that of the vertical LED without an internal reflector.</abstract><pub>IOP Publishing</pub><doi>10.7567/1882-0786/ab52b6</doi><tpages>5</tpages></addata></record>
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title Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T11%3A44%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancing%20the%20light%20extraction%20of%20AlGaN-based%20vertical%20type%20deep-ultraviolet%20light-emitting-diodes%20with%20an%20internal%20reflector&rft.jtitle=Applied%20physics%20express&rft.au=Sung,%20Youn%20Joon&rft.date=2019-12-01&rft.volume=12&rft.issue=12&rft.spage=122011&rft.pages=122011-&rft.issn=1882-0778&rft.eissn=1882-0786&rft.coden=APEPC4&rft_id=info:doi/10.7567/1882-0786/ab52b6&rft_dat=%3Ciop_cross%3Eapexab52b6%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true