Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector

AlGaN-based UV-C vertical LEDs comprising Ga-face n-contact and an internal reflector are reported here. Inside the chip, the internal reflector is designed as a hexagonal shape surrounding a circular n-electrode. The use of SiO2/Al reflectors on the etched plane improves the local reflectivity. Forming the internal reflector has been shown to lead to a significant improvement in light output power (LOP). The LOP of the vertical LED with an internal reflector is 1.27 times higher than that of the vertical LED without an internal reflector.