Heavily Fe-doped ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

We present high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (FMS) (In1−x,Fex)Sb (x = 20%-35%) thin films grown by low temperature MBE. The Curie temperature (TC) of (In1−x,Fex)Sb reaches 385 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based FMSs. Moreover, large coercive force (HC = 160 Oe) and large remanent magnetization (Mr/MS = 71%) have been observed at low temperature (10 K) for an (In1−x,Fex)Sb thin film with x = 35%, indicating that the FMS (In1−x,Fex)Sb is very promising for spintronics devices.