Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga2O3 prepared by the floating zone method

Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga2O3 prepared by the floating zone method

The resistivity and Hall coefficient RH of a wide gap semiconductor β-Ga2O3 have been investigated using crystals with various Si-doping that were purified by the zone-melting process. For the crystals with the conduction electron density

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Veröffentlicht in:Japanese Journal of Applied Physics 2019-09, Vol.58 (9), p.1
Hauptverfasser: Tomioka, Yasuhide, Ozaki, Yasuko, Inaba, Hideki, Ito, Toshimitsu
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Cations
Compensation
Conduction electrons
Crystals
Doped crystals
Electron density
Gallium oxides
Germanium
Hall effect
Impurities
Iron
Magnesium
Silicon
Single crystals
Transport properties
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Beschreibung
Zusammenfassung:The resistivity and Hall coefficient RH of a wide gap semiconductor β-Ga2O3 have been investigated using crystals with various Si-doping that were purified by the zone-melting process. For the crystals with the conduction electron density
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab39be