Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell

Growth of a freestanding wurtzite gallium phosphide (GaP) nanowire was investigated for solar-energy conversion applications. Tertiarybutylchloride (TBCl) was used to grow straight nanowires at high temperatures at which wurtzite GaP forms. By alternating the supply of triethylgallium with tertiaryb...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2019-01, Vol.58 (1), p.15004
Hauptverfasser:	Tateno, Kouta, Zhang, Guoqiang, Sasaki, Satoshi, Takiguchi, Masato, Kumakura, Kazuhide
Format:	Artikel
Sprache:	eng
Schlagworte:	Dopants Energy conversion Gallium phosphides Nanowires Photoelectric effect Photoelectric emission Photovoltaic cells Solar cells Stacking faults Wurtzite
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