Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell

Growth of a freestanding wurtzite gallium phosphide (GaP) nanowire was investigated for solar-energy conversion applications. Tertiarybutylchloride (TBCl) was used to grow straight nanowires at high temperatures at which wurtzite GaP forms. By alternating the supply of triethylgallium with tertiarybutylphosphine and TBCl, we could form straight wurtzite GaP nanowires with few stacking faults. We also investigated p- and n-type dopants and found a concentration level of about 1018 cm−3 for each dopant. We fabricated a solar cell from an axially pin-type GaP nanowire diode sample and found that the nanowire-grown area had a high photocurrent density due to the light-concentrating property of the individual nanowires.