Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate

Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm ^−2 ). The light output power and external quantum efficiency were 12.6 μ W and 0.016% at 40 mA (10.5 A cm ^−2 ), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes.