Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target

In this work, degenerate n-type GaN thin films prepared by co-sputtering from a liquid Ga-target were demonstrated and their low-field scattering mechanisms are described. Extremely high donor concentrations above 3 × 10 20 cm −3 at low process temperatures (

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Veröffentlicht in:Applied physics express 2024-03, Vol.17 (3), p.31003
Hauptverfasser: Döring, P., Tschirky, T.
Format: Artikel
Sprache:eng
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Zusammenfassung:In this work, degenerate n-type GaN thin films prepared by co-sputtering from a liquid Ga-target were demonstrated and their low-field scattering mechanisms are described. Extremely high donor concentrations above 3 × 10 20 cm −3 at low process temperatures (
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ad3367