Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target
In this work, degenerate n-type GaN thin films prepared by co-sputtering from a liquid Ga-target were demonstrated and their low-field scattering mechanisms are described. Extremely high donor concentrations above 3 × 10 20 cm −3 at low process temperatures (
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Veröffentlicht in: | Applied physics express 2024-03, Vol.17 (3), p.31003 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this work, degenerate n-type GaN thin films prepared by co-sputtering from a liquid Ga-target were demonstrated and their low-field scattering mechanisms are described. Extremely high donor concentrations above 3 × 10
20
cm
−3
at low process temperatures ( |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.35848/1882-0786/ad3367 |