A vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology

We demonstrate a vertical AlGaN DUV LED with an emission wavelength of 272 nm and submicron thickness. The device epilayers’ thickness is reduced to ∼670 nm by a combination of wafer bonding and thinning techniques, and this results in the thinnest vertical DUV LED reported to date. A light-emitting...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics express 2022-03, Vol.15 (3), p.32003
Hauptverfasser: Yan, Jiabin, Yuan, Jialei, Jiang, Yan, Zhu, Hongbo, Choi, Hoi Wai, Wang, Yongjin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate a vertical AlGaN DUV LED with an emission wavelength of 272 nm and submicron thickness. The device epilayers’ thickness is reduced to ∼670 nm by a combination of wafer bonding and thinning techniques, and this results in the thinnest vertical DUV LED reported to date. A light-emitting surface with a root mean square value of 74.7 nm is also induced by the thinning process without any other surface-roughing treatments. An n-contact electrode with a mesh geometry is adopted to expose the emission region, while the bottom metal electrode functions as a reflector to reflect downward-propagating light in an upward direction.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ac4e24