A vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology
We demonstrate a vertical AlGaN DUV LED with an emission wavelength of 272 nm and submicron thickness. The device epilayers’ thickness is reduced to ∼670 nm by a combination of wafer bonding and thinning techniques, and this results in the thinnest vertical DUV LED reported to date. A light-emitting...
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Veröffentlicht in: | Applied physics express 2022-03, Vol.15 (3), p.32003 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We demonstrate a vertical AlGaN DUV LED with an emission wavelength of 272 nm and submicron thickness. The device epilayers’ thickness is reduced to ∼670 nm by a combination of wafer bonding and thinning techniques, and this results in the thinnest vertical DUV LED reported to date. A light-emitting surface with a root mean square value of 74.7 nm is also induced by the thinning process without any other surface-roughing treatments. An n-contact electrode with a mesh geometry is adopted to expose the emission region, while the bottom metal electrode functions as a reflector to reflect downward-propagating light in an upward direction. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.35848/1882-0786/ac4e24 |