Pulsed sputtering growth of heavily Si-doped GaN (20 2̄ 1) for tunneling junction contacts on semipolar InGaN (20 2̄ 1) LEDs

We report the in-plane anisotropic conductivity of heavily Si-doped GaN (20 2 ̄ 1) prepared by pulsed sputtering deposition and its application to tunneling junction (TJ) contacts on InGaN (20 2 ̄ 1) LEDs. Si-doped GaN (20 2 ̄ 1) yielded a high electron mobility of 109 cm 2 V −1 s −1 even at an electron concentration of 1.1 × 10 20 cm −3 . The average difference in the in-plane electron mobility along the [ 1 ̄ 014] and [1 2 ̄ 10] directions was small (approximately 9.7%) because of the low stacking fault density. The heavily Si-doped GaN (20 2 ̄ 1) worked as a uniform current spreading layer and hole injection layer through the TJ on InGaN (20 2 ̄ 1) LEDs.