Reversible resistance switching by excess hydrogen doping in rutile TiO2

The effects of excess hydrogen-doping on rutile TiO2 thin film have been investigated by low-temperature hydrogen ion beam irradiation with in situ transport measurements. The hydrogen irradiation at 300 K dramatically decreases the resistivity of TiO2 film. Further irradiation at 50 K for excess H-doping and subsequent heating to room temperature result in reversible change in resistance between 3D Mott and Efros-Shklovskii variable range hopping behaviors. The non-equilibrium hydrogen doping at low temperature and desorption of excess hydrogen at elevated temperature give rise to unforeseen reversible resistance switching in rutile TiO2.