Improving the voltage of GaAs solar cells with In0.4Ga0.6As nanostructures

The fundamental reason for the decrease in solar cell (SC) voltage when introducing nanostructures has been found. It consists in the fact that recombination redistributes between nanostructures and bulk GaAs. It has been shown that, by changing the position of the nanostructure medium in p-i-n GaAs SCs, it is possible to partially suppress recombination and improve voltage while maintaining the increase in short-circuit current. The decrease of recombination via nanostructures provides an increase in SC efficiency from 19.87% to 21.94%.