Noise properties in the Coulomb blockade region of FinFETs

Noise properties in the Coulomb blockade region of FinFETs

Fin FETs (FinFETs) are a promising candidate for the platform of Si quantum computers. The noise properties of commercial FinFETs were experimentally investigated at temperatures below 10 K. The drain current showed Coulomb oscillation, indicating that the FinFET channel became a single quantum dot....

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Veröffentlicht in:Japanese Journal of Applied Physics 2024-03, Vol.63 (3), p.3
Hauptverfasser: Tanamoto, Tetsufumi, Ono, Keiji, Deguchi, Jun, Wadatsumi, Junji, Fujimoto, Ryuichi
Format: Artikel
Sprache:eng
Schlagworte:
Coulomb blockade
FinFET
Low temperature
noise
Quantum computers
quantum dot
Quantum dots
silicon qubit
single electron
trap
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Zusammenfassung:Fin FETs (FinFETs) are a promising candidate for the platform of Si quantum computers. The noise properties of commercial FinFETs were experimentally investigated at temperatures below 10 K. The drain current showed Coulomb oscillation, indicating that the FinFET channel became a single quantum dot. Moreover, the noise in the drain current was analyzed, and the basic properties of commercial FinFETs in the low-temperature region were discussed.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad2823