Degradation of vertical GaN diodes during proton and xenon-ion irradiation
We investigated the material stability of a vertical GaN Schottky barrier diode (SBD) against proton irradiations by making real-time measurements. The reverse current gradually decreased with increasing proton fluence. The current of the GaN SBD was reduced by 18% after proton irradiations with a d...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2023-06, Vol.62 (6), p.64001 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We investigated the material stability of a vertical GaN Schottky barrier diode (SBD) against proton irradiations by making real-time measurements. The reverse current gradually decreased with increasing proton fluence. The current of the GaN SBD was reduced by 18% after proton irradiations with a displacement-damage dose (
D
d
) of 10
12
MeV g
−1
. We also examined signal and current degradation occurring in a vertical GaN-on-GaN
p–n
diode (PND) during xenon-ion irradiations. The signal gradually decreased with increasing xenon-ion fluence. Xenon-ion irradiations of
D
d
= 10
12
MeV g
−1
reduced the collected charge in the PND by 11%. This signal degradation was close to the current degradation in the GaN SBD caused by the proton irradiations. We found that irradiations with
D
d
> ∼10
12
MeV g
−1
degraded the performance of the GaN devices. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.35848/1347-4065/acddb4 |