Progress in α-Ga2O3 for practical device applications
Recent progress in α-phase gallium oxide (α-Ga2O3) grown on sapphire for low-cost and practical device applications is reviewed. This review focuses on (i) dislocations formed by heteroepitaxy, (ii) p-type conductivity (a common issue with β-Ga2O3), and (iii) thermal instability due to the metastabl...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2023-06, Vol.62 (SF), p.SF0803 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Kaneko, Kentaro Fujita, Shizuo Shinohe, Takashi Tanaka, Katsuhisa |
| description | Recent progress in α-phase gallium oxide (α-Ga2O3) grown on sapphire for low-cost and practical device applications is reviewed. This review focuses on (i) dislocations formed by heteroepitaxy, (ii) p-type conductivity (a common issue with β-Ga2O3), and (iii) thermal instability due to the metastable phase of α-Ga2O3, and discusses efforts aimed at overcoming these issues. The results reveal guidelines for the dislocation density ( |
| doi_str_mv | 10.35848/1347-4065/acd125 |
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This review focuses on (i) dislocations formed by heteroepitaxy, (ii) p-type conductivity (a common issue with β-Ga2O3), and (iii) thermal instability due to the metastable phase of α-Ga2O3, and discusses efforts aimed at overcoming these issues. The results reveal guidelines for the dislocation density (<1 × 108 cm−2) so that the dislocation scattering is veiled in the electron transport, and for this purpose we mentioned buffer layers and epitaxial lateral overgrowth. Quasi-vertical Schottky barrier diodes (SBDs) show defect-insensitive behavior in current–voltage characteristics under a low current density. We also demonstrate the heterojunction pn diodes with α-phase iridium oxide (α-Ir2O3) or α-(Ir,Ga)2O3 and the ways to improve thermal stability of α-Ga2O3. The up-to-date device characteristics, that is, low on-resistance and large current SBDs, and high reverse voltage of 1400 V of a pn junction suggest promising development in α-Ga2O3-based devices.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/acd125</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Buffer layers ; Current voltage characteristics ; Dislocation density ; Electron transport ; gallium oxide ; Gallium oxides ; Heterojunctions ; Iridium ; Low currents ; metastable phase ; Metastable phases ; P-n junctions ; p-type ; Sapphire ; SBD ; Schottky diodes ; Thermal instability ; Thermal stability</subject><ispartof>Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF0803</ispartof><rights>2023 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/acd125/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Kaneko, Kentaro</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><creatorcontrib>Shinohe, Takashi</creatorcontrib><creatorcontrib>Tanaka, Katsuhisa</creatorcontrib><title>Progress in α-Ga2O3 for practical device applications</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Recent progress in α-phase gallium oxide (α-Ga2O3) grown on sapphire for low-cost and practical device applications is reviewed. This review focuses on (i) dislocations formed by heteroepitaxy, (ii) p-type conductivity (a common issue with β-Ga2O3), and (iii) thermal instability due to the metastable phase of α-Ga2O3, and discusses efforts aimed at overcoming these issues. The results reveal guidelines for the dislocation density (<1 × 108 cm−2) so that the dislocation scattering is veiled in the electron transport, and for this purpose we mentioned buffer layers and epitaxial lateral overgrowth. Quasi-vertical Schottky barrier diodes (SBDs) show defect-insensitive behavior in current–voltage characteristics under a low current density. We also demonstrate the heterojunction pn diodes with α-phase iridium oxide (α-Ir2O3) or α-(Ir,Ga)2O3 and the ways to improve thermal stability of α-Ga2O3. The up-to-date device characteristics, that is, low on-resistance and large current SBDs, and high reverse voltage of 1400 V of a pn junction suggest promising development in α-Ga2O3-based devices.</description><subject>Buffer layers</subject><subject>Current voltage characteristics</subject><subject>Dislocation density</subject><subject>Electron transport</subject><subject>gallium oxide</subject><subject>Gallium oxides</subject><subject>Heterojunctions</subject><subject>Iridium</subject><subject>Low currents</subject><subject>metastable phase</subject><subject>Metastable phases</subject><subject>P-n junctions</subject><subject>p-type</subject><subject>Sapphire</subject><subject>SBD</subject><subject>Schottky diodes</subject><subject>Thermal instability</subject><subject>Thermal stability</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNptkM9KAzEQh4MoWKsP4G3Bk4fYZDL5d5Riq1CooJ5DNpuVXUo3bra-ly_iM7m1ohdhYPj9-JiBj5BLzm6ENGhmXKCmyJSc-VBxkEdk8lsdkwljwClagFNylnM7RiWRT4h67LvXPuZcNNvi84MuPaxFUXd9kXofhib4TVHF9ybEwqe0GfPQdNt8Tk5qv8nx4mdPycvi7nl-T1fr5cP8dkUbADNQwZm2FlFzUyLYqAVGKXWQWHKvRZAh2FqVAi3HIBm3KpoqWlCVDUHoUkzJ1eFu6ru3XcyDa7tdvx1fOjCgkEkLdqTogWq69Adw5r7VuL0Ht_fgDmpG_vofvm19cgrc02IcZphwqarFF1F5YzE</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Kaneko, Kentaro</creator><creator>Fujita, Shizuo</creator><creator>Shinohe, Takashi</creator><creator>Tanaka, Katsuhisa</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20230601</creationdate><title>Progress in α-Ga2O3 for practical device applications</title><author>Kaneko, Kentaro ; Fujita, Shizuo ; Shinohe, Takashi ; Tanaka, Katsuhisa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i228t-31079944718b429e734e557c54b1a73c5cc9f6b34914c50196e8de926d9cc37b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Buffer layers</topic><topic>Current voltage characteristics</topic><topic>Dislocation density</topic><topic>Electron transport</topic><topic>gallium oxide</topic><topic>Gallium oxides</topic><topic>Heterojunctions</topic><topic>Iridium</topic><topic>Low currents</topic><topic>metastable phase</topic><topic>Metastable phases</topic><topic>P-n junctions</topic><topic>p-type</topic><topic>Sapphire</topic><topic>SBD</topic><topic>Schottky diodes</topic><topic>Thermal instability</topic><topic>Thermal stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kaneko, Kentaro</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><creatorcontrib>Shinohe, Takashi</creatorcontrib><creatorcontrib>Tanaka, Katsuhisa</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kaneko, Kentaro</au><au>Fujita, Shizuo</au><au>Shinohe, Takashi</au><au>Tanaka, Katsuhisa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Progress in α-Ga2O3 for practical device applications</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2023-06-01</date><risdate>2023</risdate><volume>62</volume><issue>SF</issue><spage>SF0803</spage><pages>SF0803-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Recent progress in α-phase gallium oxide (α-Ga2O3) grown on sapphire for low-cost and practical device applications is reviewed. This review focuses on (i) dislocations formed by heteroepitaxy, (ii) p-type conductivity (a common issue with β-Ga2O3), and (iii) thermal instability due to the metastable phase of α-Ga2O3, and discusses efforts aimed at overcoming these issues. The results reveal guidelines for the dislocation density (<1 × 108 cm−2) so that the dislocation scattering is veiled in the electron transport, and for this purpose we mentioned buffer layers and epitaxial lateral overgrowth. Quasi-vertical Schottky barrier diodes (SBDs) show defect-insensitive behavior in current–voltage characteristics under a low current density. We also demonstrate the heterojunction pn diodes with α-phase iridium oxide (α-Ir2O3) or α-(Ir,Ga)2O3 and the ways to improve thermal stability of α-Ga2O3. The up-to-date device characteristics, that is, low on-resistance and large current SBDs, and high reverse voltage of 1400 V of a pn junction suggest promising development in α-Ga2O3-based devices.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/acd125</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF0803 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Buffer layers Current voltage characteristics Dislocation density Electron transport gallium oxide Gallium oxides Heterojunctions Iridium Low currents metastable phase Metastable phases P-n junctions p-type Sapphire SBD Schottky diodes Thermal instability Thermal stability |
| title | Progress in α-Ga2O3 for practical device applications |
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