Progress in α-Ga2O3 for practical device applications

Progress in α-Ga2O3 for practical device applications

Recent progress in α-phase gallium oxide (α-Ga2O3) grown on sapphire for low-cost and practical device applications is reviewed. This review focuses on (i) dislocations formed by heteroepitaxy, (ii) p-type conductivity (a common issue with β-Ga2O3), and (iii) thermal instability due to the metastabl...

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Veröffentlicht in:Japanese Journal of Applied Physics 2023-06, Vol.62 (SF), p.SF0803
Hauptverfasser: Kaneko, Kentaro, Fujita, Shizuo, Shinohe, Takashi, Tanaka, Katsuhisa
Format: Artikel
Sprache:eng
Schlagworte:
Buffer layers
Current voltage characteristics
Dislocation density
Electron transport
gallium oxide
Gallium oxides
Heterojunctions
Iridium
Low currents
metastable phase
Metastable phases
P-n junctions
p-type
Sapphire
SBD
Schottky diodes
Thermal instability
Thermal stability
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Beschreibung
Zusammenfassung:Recent progress in α-phase gallium oxide (α-Ga2O3) grown on sapphire for low-cost and practical device applications is reviewed. This review focuses on (i) dislocations formed by heteroepitaxy, (ii) p-type conductivity (a common issue with β-Ga2O3), and (iii) thermal instability due to the metastable phase of α-Ga2O3, and discusses efforts aimed at overcoming these issues. The results reveal guidelines for the dislocation density (
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acd125