Utilizing a photosensitive dry film resist in proton beam writing

Dry film resists (DFRs) are suitable for the fabrication of large volume devices as the thickness of the film can be easily controlled. Here, the DFR microstructures were patterned using the proton beam writing (PBW) technique by taking advantages of the direct-write process, straight trajectories of protons, and large processing depth. The results show that the required irradiation dose of 15 μ m DFR was 10 nC mm −2 for 1 MeV protons. In summary, we have optimized the PBW conditions to create smooth surface micropatterns with a vertical wall in the DFR.