Fabrication of Si protrusions by local melting of a narrow current path on a Si wafer via resistive heating

Si protrusions were fabricated by surface melting and resolidifying of a Si(111) wafer covered with a 100 nm thick molybdenum (Mo) layer, in which a narrow region was generated using a microgrinder. This region results in a narrow current path and thus localized resistive heating, leading to specifi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2021-12, Vol.60 (12), p.126506
Hauptverfasser:	Nishimura, Takashi, Tomitori, Masahiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Freezing Heating Interdiffusion Melting Molybdenum position-controlled current heating Precipitates Self-assembly Silicides Silicon silicon protrusions surface melting and resolidifying Surface tension
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