Fabrication of Si protrusions by local melting of a narrow current path on a Si wafer via resistive heating

Si protrusions were fabricated by surface melting and resolidifying of a Si(111) wafer covered with a 100 nm thick molybdenum (Mo) layer, in which a narrow region was generated using a microgrinder. This region results in a narrow current path and thus localized resistive heating, leading to specific melting of the Si in the path. The melted Si flowed away from the path to both sides, which were at temperatures lower than that of the path. Consequently, two Si protrusions ∼400 μ m in height capped with Mo silicide precipitates were formed on each side of the burned-out path, as revealed by scanning electron microscopy with energy-dispersive X-ray spectroscopy. The formation mechanism was discussed in terms of the non-uniform temperature, surface tension, interdiffusion, and freezing-point depression of the surface. This study revealed the potential of fabricating an array of self-assembled Si protrusions by resistive heating of narrow paths.