The synthesis and characterization of 1111-type diluted magnetic semiconductors (La1−xSrx)(Zn1−xTMx)AsO (TM = Mn, Fe, Co)

The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in (La1−xSrx)(Zn1−xTMx)AsO (TM = Mn, Fe, Co) with the doping level up to . Whil...

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Veröffentlicht in:Europhysics letters 2013-09, Vol.103 (6), p.67011
Hauptverfasser: Lu, Jicai, Man, Huiyuan, Ding, Cui, Wang, Quan, Yu, Biqiong, Guo, Shengli, Wang, Hangdong, Chen, Bin, Han, Wei, Jin, Changqing, Uemura, Yasutomo J., Ning, Fanlong
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Sprache:eng
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Zusammenfassung:The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in (La1−xSrx)(Zn1−xTMx)AsO (TM = Mn, Fe, Co) with the doping level up to . While the system remains semiconducting, doping with Sr and Mn results in ferromagnetic order with , and doping with Sr and Fe results in a spin-glass-like state below with a saturation moment of ∼0.02 μB/Fe, an order of magnitude smaller than the ∼0.4 μB/Mn of Sr- and Mn-doped samples. The same type of magnetic state is observed neither for (Zn,Fe) substitution without carrier doping, nor for Sr- and Co-doped specimens.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/103/67011