Ge Nano-Heteroepitaxy: From Nano-Pillars to Thick Coalesced Layers

Ge co-integration with Si has always attracted a lot of attention. Thanks to its superior electronic properties, Ge can be used as a channel material in p-type Metal Oxide Semiconductor transistors (high hole mobility) or low power devices such as tunnelling field effect transistors (steep sub-thres...

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Veröffentlicht in:	Meeting abstracts (Electrochemical Society) 2022-10, Vol.MA2022-02 (32), p.1229-1229
Hauptverfasser:	Mastari, Marouane, Charles, Matthew, Pimenta-Barros, Patricia, Argoud, Maxime, Tiron, Raluca, Papon, Anne-Marie, Chevalier, Nicolas, Hartmann, Jean-Michel, Landru, Didier, Kim, Young-Pil, Kononchuk, Oleg
Format:	Artikel
Sprache:	eng
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