Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices

In this research, a novel grapho-silicidation is introduced to form a low resistance ohmic contact for n+ 4H-SiC power semiconductor devices. In this method, amorphous line and space patterns with sizes of 100 nm and 200 nm were formed in SiC substrate with ion implantation, and Ni silicide was formed on the SiC substrate. By the grapho-silicidation, carbon agglomeration was controlled, and low contact resistance of 1.9 × 10−3 Ωcm2 was realized.