InGaN Light-Emitting Diodes with Embedded Roughened Structure in the GaN/Sapphire Interface Formed Using Laser Decomposition Process

InGaN-based light-emitting diodes (LEDs) with inverted pyramidal structures at their GaN/patterned-sapphire interfaces were fabricated by laser decomposition and wet crystallographic etching. Partially roughening the LED structure increased the light output power of the by 21% enhancement at an oper...

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Veröffentlicht in:ECS journal of solid state science and technology 2012-01, Vol.1 (2), p.R62-R65
Hauptverfasser: Lin, Chia-Feng, Huang, Wan-Chun, Chen, Sih-Han, Hsieh, Tsung-Han, Tsai, Peng-Han, Yu, Tzu-Yun, Yang, Chung-Chieh
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Sprache:eng
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Zusammenfassung:InGaN-based light-emitting diodes (LEDs) with inverted pyramidal structures at their GaN/patterned-sapphire interfaces were fabricated by laser decomposition and wet crystallographic etching. Partially roughening the LED structure increased the light output power of the by 21% enhancement at an operating current of 20mA over that of a non-treated LED structure. The transmittance of the roughened LED structure (10.5%) was lower than that of a non-treated LED structure (20.3%) at 447nm because the incident light was mostly reflected and scattered by the patterned-sapphire structure and by the roughened structure at the GaN/sapphire interface. The light emission intensity in the laser-treated striped region, with the roughened N-face GaN surface was higher than that in the non-treated patterned sapphire region. The InGaN structure with the roughened inverted pyramidal structure increased the light extraction efficiency of nitride-based LEDs.
ISSN:2162-8769
2162-8777
DOI:10.1149/2.008202jss