Effects of Tri-Layer Polymer Dielectrics on Electrical Characteristics in Pentacene Thin Film Transistors
The tri-layer polymer dielectrics were applied to reduce leakage significantly resulting in improved device mobility and stability. The lower and more stable leakage current can be ascribed to smoother and pinhole-free surface as Scanning electron microscope (SEM) shown. With the appropriate arrange...
Gespeichert in:
Veröffentlicht in: | ECS solid state letters 2014-05, Vol.3 (7), p.N19-N22 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The tri-layer polymer dielectrics were applied to reduce leakage significantly resulting in improved device mobility and stability. The lower and more stable leakage current can be ascribed to smoother and pinhole-free surface as Scanning electron microscope (SEM) shown. With the appropriate arrangement of three dielectric layers, mobility of pentacene thin film transistors (OTFTs) could be enhanced by a factor of 1.7, while non-cross-linked poly-4-vinylphenol (NCPVP) instead of cross-link PVP (CPVP), was chosen as top layer for surface energy closer to pentacene film. |
---|---|
ISSN: | 2162-8742 2162-8750 |
DOI: | 10.1149/2.0071407ssl |