Multi-Stacked Layer in the Solution Processing of HfO2 Films to Obtain Superior Electrical Performance in Liquid Crystal Devices

The use of an alignment layer between liquid crystals (LCs) and solution-processed inorganic materials has been studied primarily for its application to next generation display technologies. However, solution-processing results in porous films and defects. In this study, we used hafnium (IV) oxide (HfO2) alignment films in a multi-stacked layer (MSL) for a high performance device. Laminating the layer more, the density of the films and smoothed their roughness. These effects resulted from the low trapping rate of electrons and holes in the MSL. Therefore, the LCs were well-aligned in the MSL-based devices.